| PART |
Description |
Maker |
| 157AVG063MGBJ 397AVG035MGBJ 126AVG160MGBJ 337AVG01 |
Small Size - High Temperature ?Low ESR ?High Ripple Current ?Stable with Temperature ?High Frequency
|
Illinois Capacitor, Inc...
|
| 3197 A3197ELT A3197EU A3197LLT A3197LU A3196LLT A3 |
PROTECTED HIGH-TEMPERATURE OPEN-COLLECTOR HALL-EFFECT LATCH
PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH
PROTECTED/ HIGH-TEMPERATURE/ OPEN-COLLECTOR HALL-EFFECT LATCH
Protected,High-Temperature,Hall-Effect Latch With Active Pull-Down(保护型，工作于高温，集电极开路霍尔效应锁存器)
IC SENSOR QWHEEL ROTARY 14TSSOP
Protected,High-Temperature,Hall-Effect Latch With Active Pull-Down(淇?????宸ヤ?浜??娓╋???????璺??灏??搴??瀛??)
Protected, high-temperature, hall-effect latch with active pull-down
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| BZG05C BZG05C10 BZG05C100 BZG05C11 BZG05C12 BZG05C |
High Precision 10 V Reference; Package: CHIPS OR DIE; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
High Precision 10 V Reference; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
2.5 V/3.0 V Ultrahigh Precision Bandgap Voltage Reference; Package: PDIP; No of Pins: 8; Temperature Range: Industrial 硅的Z -二极
High Precision 10 V Reference; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
Silicon Z-Diodes 硅的Z -二极
High Precision 10 V Reference; Package: CerDIP; No of Pins: 8; Temperature Range: Military
Silicon Z-Diode(稳压应用电压范围3.3-100V的齐纳二极管)
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| MP3V5050V MP3V5050VC6T1 MP3V5050VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| MPXV6115VC6U |
High Temperature Accuracy ntegrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
|
Motorola
|
| TC1046VNB TC1046 TC1046VNBTR |
High Precision Temperature-to-Voltage Converter
The TC1046 is a linear output temperature sensor whose output voltage is directly proportional to measured temperature. The TC1046 ...
The TC1046 is a linear output temperature sensor whose output voltage is directly proportional to measured temperature. The TC1046 can accurately measure temperature from -40C to 125C. The output voltage range for this device is typically
|
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| SM6HT24A SM6HT27A SM6HT36A SM6HT43A 6565 SM6HTXXA |
From old datasheet system
HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONS
HIGH TEMPERATURE TRANSILTM FOR AUTOMOTIVE APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics]
|
| SMM4FXXA-TR SMM4F28A SMM4F24A SMM4F20A SMM4F15A SM |
High junction temperature Transil?/a>
High junction temperature Transil⑩
|
STMicroelectronics
|
| AH175-WL-B-A AH175-WL-B-B AH175-PL-B-A AH175-PL-B- |
HALL EFFECT LATCH FOR HIGH TEMPERATURE MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 400mV, RECTANGULAR, THROUGH HOLE MOUNT
HALL EFFECT LATCH FOR HIGH TEMPERATURE 霍尔效应锁存高温
|
Diodes, Inc.
磁阻传感
DIODES[Diodes Incorporated]
Diodes Inc.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| TH3D106K035A0500 TH3D106K035A10R0 TH3D106K035B0500 |
Solid Tantalum Surface Mount Capacitors Tantamount㈢ Molded Case, High Temperature
Solid Tantalum Surface Mount Capacitors Tantamount? Molded Case, High Temperature
Solid Tantalum Surface Mount Capacitors Tantamount庐 Molded Case, High Temperature
Solid Tantalum Surface Mount Capacitors Tantamount垄莽 Molded Case, High Temperature
|
Vishay Siliconix
|
